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2SC2001 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2001 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() 2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 17-Feb-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High hFE and low VCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ) CLASSIFICATION OF hFE Product-Rank 2SC2001-M 2SC2001-L 2SC2001-K Range 90~180 135~270 200~400 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.7 A Collector Power Dissipation PC 0.6 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100μA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=30V, IE=0 Collector Cut – Off Current ICEO - - 0.1 μA VCE=20V, IB=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=5V, IC=0 DC Current Gain hFE 90 - 400 VCE=1V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.6 V IC=700mA, IB=70mA Base to Emitter voltage VBE(sat) - - 1.2 V IC=700mA, IB=70mA Transition Frequency fT 50 - - MHz VCE=6V, IC=10mA, f=30MHz Emitter Collector Base TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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