2SC2655 datasheet(1/3 Pages) SECOS

部件名	2SC2655

功能描述	NPN Plastic Encapsulated Transistor

PDF	3 Pages

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 3 page

2SC2655

2A , 50V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

28-Mar-2011 Rev. A

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A)



High speed switching time：tstg=1μs(Typ.)



Complementary to 2SA1020

CLASSIFICATION OF hFE (1)

Product-Rank

2SC2655-O

2SC2655-Y

Range

70-140

120-240

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

50

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

2

A

Collector Power Dissipation

PC

0.9

W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

V(BR)CBO

50

-

V

IC=100μA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

50

-

V

IC=10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=100μA, IC=0

Collector Cut-Off Current

ICBO

-

1

μA

VCB=50V, IE=0

Emitter Cut-Off Current

IEBO

-

1

μA

VEB=5V, IC=0

DC Current Gain

hFE (1)

70

-

240

VCE=2V, IC=0.5A

hFE (2)

40

-

VCE=2V, IC=1.5A

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.5

V

IC=1A, IB=0.05A

Base to Emitter Saturation Voltage

VBE(sat)

-

1.2

V

IC=1A, IB=0.05A

Transition Frequency

fT

-

100

-

MHz

VCE=2V, IC=0.5A

Collector Output Capacitance

Cob

-

30

-

pF

VCB=10V, IE=0, f=1MHz

Switch Time

Turn-on Time

Ton

-

0.15

-

μs

VCC=30V

IB1= -IB2=0.05A

IC=1A

Storage Time

Ts

-

2

-

Fall Time

Tf

-

0.15

-

TO-92MOD



Emitter



Collector



Base

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

5.50

6.50

H

1.70

2.05

B

8.00

9.00

J

2.70

3.20

C

12.70

14.50

K

0.85

1.15

D

4.50

5.30

L

1.60 Max

E

0.35

0.65

M

0.00

0.40

F

0.30

0.51

N

4.00 Min

G

1.50 TYP.

A

C

E

K

F

D

B

G

H

J

L

M

N

类似零件编号 - 2SC2655

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC2655	179Kb / 4P	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
Unisonic Technologies	2SC2655	61Kb / 4P	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
Toshiba Semiconductor	2SC2655	139Kb / 5P	Silicon NPN Epitaxial Type (PCT Process)
Weitron Technology	2SC2655	282Kb / 2P	NPN General Purpose Transistors
Unisonic Technologies	2SC2655	210Kb / 4P	POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

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