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2SC2715 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2715 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() 2SC2715 0.05A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 14-Mar-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. CLASSIFICATION OF hFE Product-Rank 2SC2715-R 2SC2715-O 2SC2715-Y Range 40~80 70~140 120~240 Marking RR1 RO1 RY1 PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 350 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=10μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=10μA, IC=0 Collector Cut-Off Current ICBO - - 0.1 μA VCB=35V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 μA VEB=4V, IC=0 DC Current Gain hFE 40 - 240 VCE=12V, IC=2mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.4 V IC=10mA, IB=1mA Base to Emitter Saturation Voltage VBE(sat) - - 1 V IC=10mA, IB=1mA Transition Frequency fT 100 - 400 MHz VCE=10V, IC=1mA Power Gain Gpe 27 - 33 dB VCE=6V, IC=1mA, f=10.7MHz SOT-23 Top View A L C B D G H J F K E 1 2 3 1 2 3 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 |
类似零件编号 - 2SC2715 |
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类似说明 - 2SC2715 |
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