2SC3199 datasheet(1/1 Pages) SECOS

部件名	2SC3199

功能描述	NPN Plastic-Encapsulated Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 1 page

2SC3199

0.15 A , 50 V

NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente

14-Mar-2011 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

E

K

F

D

B

G

H

J



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



High Current Capability



High DC Current Gain



Small Package

APPLICATIONS



Audio Amplifier Applications



AM Amplifier Applications

CLASSIFICATION OF hFE

Product-Rank

2SC3199-O

2SC3199-Y

2SC3199-GR

2SC3199-BL

Range

70~140

120~240

200~400

300~700

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

50

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

150

mA

Collector Power Dissipation

PC

400

mW

Thermal Resistance From Junction To Ambient

RθJA

312

°C / W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

50

-

V

IC=0.1mA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

50

-

V

IC=1mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=0.1mA, IC=0

Collector Cut – Off Current

ICBO

-

0.1

μA

VCB=50V, IE=0

Emitter Cut – Off Current

IEBO

-

0.1

μA

VEB=5V, IC=0

DC Current Gain

hFE

70

-

700

VCE=6V, IC=2mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.25

V

IC=100mA, IB=10mA

Collector Output Capacitance

Cob

-

3.5

pF

VCB=10V, IE=0, f=1MHz

Transition Frequency

fT

80

-

MHz

VCE=10V, IC=1mA



Emitter



Collector



Base

TO-92

REF.

Millimeter

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76

类似零件编号 - 2SC3199

制造商	部件名	数据表	功能描述
List of Unclassifed Man...	2SC3199	55Kb / 1P	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
List of Unclassifed Man...	2SC3199	48Kb / 1P	TO-92 Plastic Package Transistors (NPN)
Jiangsu Changjiang Elec...	2SC3199	405Kb / 3P	TO-92 Plastic-Encapsulate Transistors
Nanjing International G...	2SC3199	1Mb / 4P	TO-92 Plastic-Encapsulate Transistors
Nanjing International G...	2SC3199-TA	1Mb / 4P	TO-92 Plastic-Encapsulate Transistors

More results

类似说明 - 2SC3199

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	2N5172	81Kb / 1P	NPN Plastic Encapsulated Transistor
	2N5832	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N6517	142Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1008	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1318A	135Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC1923	83Kb / 1P	NPN Plastic Encapsulated Transistor
	D882S	214Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC4548	77Kb / 1P	NPN Plastic Encapsulated Transistor
	2SBA42	74Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC2668	140Kb / 2P	NPN Plastic-Encapsulated Transistor