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2SC4081F 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4081F 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Elektronische Bauelemente 2SC4081F 0.15A , 60V NPN Plastic-Encapsulate Transistor 18-Feb-2011 Rev. C Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Cob. Cob=2.0pF (Typ.) Excellent hFE linearity Complementary to 2SA1576A CLASSIFICATION OF hFE Product-Rank 2SC4081F-Q 2SC4081F-R 2SC4081F-S Range 120~270 180~390 270~560 Marking BQ BR BS PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current IC 150 mA Collector Power Dissipation PC 200 mW Junction & Storage temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO 60 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 7 - - V IE=50µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µ A VCB=60V, IE=0 Emitter Cut-off Current IEBO - - 0.1 µ A VEB=7V, IC=0 DC Current Gain hFE 120 - 560 VCE=6V, IC=1mA Collector-Emitter Saturation Voltage VCE(sat) - - 0.4 V IC=50mA, IB=5mA Transition Frequency fT - 180 - MHz VCE=12V, IC=2mA,f=30MHz Collector Output Capacitance Cob - - 3.5 pF VCB=12V, IE=0, f=1MHz SOT-323 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 |
类似零件编号 - 2SC4081F |
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类似说明 - 2SC4081F |
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