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2SC5585 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC5585 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente 2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor 24-Feb-2011 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High Current. Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) Complement of 2SC4738. Application General Purpose Amplification. MARKING PACKAGE INFORMATION Package MPQ LeaderSize SOT-523 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 6 V Collector Currrent IC 500 mA Collector Power Dissipation PC 150 mW Junction & Storage Temperature TJ, TSTG 150, -55 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 15 - - V IC=10 μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 12 - - V IC=1 mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 6 - - V IE=10 μA, IC=0 Collector cut-off current ICBO - - 0.1 μA VCB=15V, IE=0 Emitter cut-off current IEBO - - 0.1 μA VEB=6V, IC=0 DC current gain hFE 270 - 680 VCE=2V, IC=10mA Collector-emitter saturation voltage * VCE(sat) - - 0.25 V IC=200mA, IB=10mA Transition frequency fT - 320 - MHz VCE=2V, IC=10mA, f=100MHz Collector output capacitance Cob - 7.5 - pF VCB=10V, IE=0, f=1MHz SOT-523 Top View A L M C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.75 0.85 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.25 M 0.25 0.325 BX |
类似零件编号 - 2SC5585 |
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类似说明 - 2SC5585 |
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