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BAS16H 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部件名 BAS16H
功能描述  Surface Mount Small Signal Switching Diode
PDF  2 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

BAS16H 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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BAS16H
Surface Mount Small Signal Switching Diode
Elektronische Bauelemente
18-May-2010 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
MARKING
T6
or
T4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single Diode @ T
A = 25°C)
Parameter
Symbol
Ratings
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
150
mA
Peak Forward Surge Current @=1.0μs
@=1.0s
IFSM
2.0
A
1.0
Power Dissipation
PD
200
mW
Thermal Resistance Junction to Ambient
RθJA
625
°C / W
Junction, Storage Temperature
TJ, TSTG
125, -65 ~ +150
°C
ELECTRICAL CHARACTERISTICS (at T
A = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward Voltage
VF1
-
-
0.715
V
IF = 1mA
VF2
-
-
0.855
IF = 10mA
VF3
-
-
1.0
IF = 50mA
VF4
-
-
1.25
IF = 150mA
Reverse Voltage Leakage Current
IR
-
-
1
μA
VR = 75V
-
-
25
nA
VR = 20V
Capacitance between terminals
CT
-
-
2
pF
VR = 0V, f=1MHz
Reverse Recovery Time
tRR
-
-
4
nS
IF = IR = 10 mA,
IRR=0.1xIR, RL=100
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
1.05 REF.
E
0.080
0.180
B
0.20 REF.
F
1.15
1.45
C
0.80
1.00
G
1.60
1.80
D
0.25
0.40
H
2.30
2.70
Cathode Band
G
E
A
J
F
D
H
C
B
1
2
SOD-323


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