BAS116 datasheet(1/3 Pages) SECOS

部件名	BAS116

功能描述	Surface Mount Switching Diode

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 3 page

Elektronische Bauelemente

BAS116

Voltage 0.1 A, 80 V

Surface Mount Switching Diode

01-June-2002 Rev. A

Page 1 of 3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low leakage current applications

Medium speed witching times

PACKAGE DIMENSIONS

MARKING: JV

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Peak Repetitive Peak Reverse Voltage

VRRM

75

V

Working Peak Reverse Voltage

VRWM

75

V

DC Blocking Voltage

VR

75

V

Collector Currrent

IFM

200

mA

Total Power Dissipation

PD

225

mW

Junction, Storage Temperature

TJ, TSTG

+150, -55 ~ +150

℃

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Parameters

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

VR

75

-

V

IR = 100uA

VF1

-

0.9

V

IF = 1mA

VF2

-

1

V

IF = 10mA

VF3

-

1.1

V

IF = 50mA

Forward Voltage

VF4

-

1.25

V

IF = 150mA

Reverse Current

IR

-

5

nA

VR = 75V

Diode Capacitance

CTOT

-

2

-

pF

VR = 0V, f=1MHz

Reverse Recovery Time

TRR

-

3

uS

IF=IR=10mA,IRR=0.1×IR , RL=100Ω

Collector

Base

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

类似零件编号 - BAS116

制造商	部件名	数据表	功能描述
NXP Semiconductors	BAS116	52Kb / 8P	Low-leakage diode 1999 May 26
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Infineon Technologies A...	BAS116	444Kb / 4P	Silicon Low Leakage Diode Mar-10-2004
Diodes Incorporated	BAS116	344Kb / 3P	SURFACE MOUNT LOW LEAKAGE DIODE DS30233 Rev. 7 - 2

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