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BAS316 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS316 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  FEATURES MARKING: A6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Parameter Symbol Limits Unit DC reverse voltage VR 100 V Forward current IF 250 mA Total Device Dissipation PD 400 mW Junction and storage temperature Tj ,Tstg -65-+150 ℃ Electrical Ratings @TA=25 ℃ Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 100 IR=100uA VF1 715 IF=1mA VF2 855 IF=10mA VF3 1000 IF=50mA Forward voltage VF4 1250 mV IF=150mA Reverse recovery Time trr 4 ns IF=IR=10mAdc,RL=100Ω IR1 0.03 VR=25V Reverse current IR2 1 μA VR=75V Forward recovery voltage VFR 1.75 V IF=10mA, tr= 20ns Diode Capacitance CD 1.5 pF VR=0V,f=1MHZ Any changing of specification will not be informed individual BAS316 Surface Mount Switching Diode SOD-323(SC-76) http://www.SeCoSGmbH.com Elektronische Bauelemente .010 (0.25) min. .012 (0.3) .059 (1.5) Cathode Band Top View .043 (1.1) Dimensions in inches and (millimeters) 12-Jul-2007 Rev. B Page 1 of 3 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
类似零件编号 - BAS316 |
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类似说明 - BAS316 |
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