D2002 datasheet(1/2 Pages) SEME-LAB

部件名	D2002

功能描述	METAL GATE RF SILICON FET

PDF	2 Pages

Scroll/Zoom	100%

制造商	SEME-LAB [Seme LAB]

网页	http://www.semelab.co.uk

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1 / 2 page

D2002UK

Prelim. 12/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage

BVGSS

Gate – Source Breakdown Voltage

ID(sat)

Drain Current

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

29W

65V

±20V

2A

–65 to 150°C

200°C

MECHANICAL DATA

G

K

M

J

I

E

D

(2 pls)

C

N

(typ)

A

B

F

(2 pls)

H

1

2

3

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

5W – 28V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

•HIGHGAIN–13dBMINIMUM

DP

PIN 1

SOURCE

PIN 2

DRAIN

PIN 3

GATE

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• VHF/UHF COMMUNICATIONS

fromDCto2GHz

METAL GATE RF SILICON FET

TetraFET

DIM

mm

Tol.

Inches

Tol.

A

16.51

0.25

0.650

0.010

B

6.35

0.13

0.250

0.005

C

45°

5°

45°

5°

D

3.30

0.13

0.130

0.005

E

18.92

0.08

0.745

0.003

F

1.52

0.13

0.060

0.005

G

2.16

0.13

0.085

0.005

H

14.22

0.08

0.560

0.003

I

1.52

0.13

0.060

0.005

J

6.35

0.13

0.250

0.005

K

0.13

0.03

0.005

0.001

M

5.08

0.51

0.200

0.020

N

1.27 x 45°

0.13

0.050 x 45° 0.005

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