BFS20 datasheet(1/1 Pages) SECOS

部件名	BFS20

功能描述	Plastic-Encapsulate Transistor

PDF	1 Pages

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 1 page

Any changing of specification will not be informed individual

BFS20

NPN Silicon

Plastic-Encapsulate Transistor

Power dissipation

High Fequency Application.

VHF Band Amplifier application

RoHS Compliant Product

PCM : 0.25 W

Collector Current

ICM : 25mA

Collector-base voltage

FEATURES

Collector

3

1

Base

2

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

http://www.SeCoSGmbH.com

Elektronische Bauelemente

1

2

V(BR)CBO : 30 V

Operating & storage junction temperature

Tj, Tstg : - 55

O

C ~ + 150

O

C

3

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

µA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 100

µA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

4

V

Collector cut-off current

ICBO

VCB=20V, IE=0

0.1

µA

Collector cut-off current

ICEO

VCE=15V, IB=0

0.1

µA

Collector cut-off current

IEBO

VEB=4V, IC=0

0.1

µA

DC current gain

hFE

VCE=10V, IC= 7mA

40

120

Collector-emitter saturation voltage

VCE(sat)

IC=10 mA, IB=1mA

0.3

V

Base-emitter voltage

VBE(on)

IC=7mA, VCE=10V

0.9

V

Transition frequency

fT

VCE= 10V, IC=5mA

f = 100MHz

275

MHz

Marking

G11

01-Jun-2002 Rev. A

Page 1 of 1

A suffix of "-C" specifies halogen & lead-free

类似零件编号 - BFS20

制造商	部件名	数据表	功能描述
NXP Semiconductors	BFS20	41Kb / 8P	NPN medium frequency transistor 1999 Apr 15
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KEC(Korea Electronics)	BFS20	125Kb / 1P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)
Diotec Semiconductor	BFS20	174Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors

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