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D2213 数据表(PDF) 1 Page - Seme LAB |
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D2213 数据表(HTML) 1 Page - Seme LAB |
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1 / 2 page ![]() LAB SEME D2213UK Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/96 PD Power Dissipation BVDSS Drain – Source Breakdown Voltage * BVGSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 83W 40V ±20V 8A –65 to 150°C 200°C MECHANICAL DATA F A C B (2 pls) K 2 3 E 1 G (4 pls) 5 4 D N M JI H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM DK PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1 PIN 2 DRAIN 1 PIN 4 GATE 2 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1MHz to 2 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 6.45 0.13 0.254 0.005 B 1.65R 0.13 0.065R 0.005 C 45° 5° 45° 5° D 16.51 0.76 0.650 0.03 E 6.47 0.13 0.255 0.005 F 18.41 0.13 0.725 0.005 G 1.52 0.13 0.060 0.005 H 4.82 0.25 0.190 0.010 I 24.76 0.13 0.975 0.005 J 1.52 0.13 0.060 0.005 K 0.81R 0.13 0.032R 0.005 M 0.13 0.02 0.005 0.001 N 2.16 0.13 0.085 0.005 * Per Side |
类似零件编号 - D2213 |
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类似说明 - D2213 |
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