MBR12040CT datasheet(1/2 Pages) MICROSEMI

部件名	MBR12040CT

功能描述	Schottky PowerMod

PDF	2 Pages

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制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

标志

1 / 2 page

ROHS Compliant

R(OV) 2 Amps

FSM 1000 Amps

F(AV) 60 Amps

F(AV) 120 Amps

CPT12035 - CPT12050

*Pulse test: Pulse width 300µsec, Duty cycle 2%

Thermal and Mechanical Characteristics

copper

Baseplate: Nickel plated

D=Doubler

Baseplate

Common Cathode

Baseplate

A=Common Anode

Baseplate

Electrical Characteristics

Reverse Voltage

Repetitive Peak

Schottky PowerMod

*Add Suffix A for Common Anode, D for Doubler

Mounting Base Torque (outside holes)

Mounting Base Torque (center hole)

center bolt must be torqued first

Weight

current per leg

per leg

per pkg

Max thermal resistance per leg

Max thermal resistance per pkg

Max peak reverse current

Typical thermal resistance (greased)

Terminal Torque

Typical junction capacitance per leg

Storage temp range

Operation junction temp range

Maximum repetitive reverse

Average forward current

Maximum surge current

Max peak forward voltage

Max peak reverse current

Average forward current

RM 3 mA

R

0

R

0

CS

JC

STG

T J

R0

T

JC

J 2700 pF

C

l

RM 40 mA

FM .63 Volts

FM .80 Volts

V

I

V

I

l

Catalog Number

H

Q

Working Peak

Reverse Voltage

40V

45V

50V

35V

CPT12040*

CPT12045*

CPT12050*

CPT12035*

Microsemi

V

U

N

W

F

E

50V

45V

40V

35V

Notes:

U

C

B

G

R

A

8-10 inch pounds

30-40 inch pounds

2.8 ounces (75 grams) typical

35-50 inch pounds

-55° C to 175° C

8.3ms, half sine, J = 175°C

RRM, J = 125°C*

FM = 120A: J = 25°C*

FM = 120A: J = 175°C

R = 5.0V, J = 25°C

0.08° C/W

0.43° C/W

0.85° C/W

V

T

C = 140°C

T

I

V

I

T

C = 140°C

T

Junction to case

Case to sink

R

T

R

Dia.

1/4-20

Notes

0.800

0.130

0.510

---

3.150 BSC

---

0.630

---

0.290

0.340

0.195

Schottky Barrier Rectifier

Guard Ring Protection

120 Amperes/35 to 50 Volts

Reverse Energy Tested

175°C Junction Temperature

U 0.600

0.312

0.180

V

W

---

0.275

Q

R

N

1.375 BSC

0.010

0.490

G

H

F

0.700

---

0.120

C

E

B

34.92 BSC

80.01 BSC

15.24

---

7.92

4.57

6.99

17.78

---

3.05

12.45

0.25

---

7.37

8.64

4.95

20.32

3.30

12.95

16.00

---

3.630

Max.

Dim. Inches

---

Min.

A

Millimeters

---

Min.

92.20

Max.

Industry

Part Number

MBR12035CT

MBR12040CT

MBR12045CT

,Square wave,

0JC = 0.43°C/W

f = 1 KHZ, 25° C, 1µsec square wave

RRM, J = 25°C

,Square wave, 0JC = 0.85°C/W

January, 2010 - Rev. 6

www.microsemi.com

类似零件编号 - MBR12040CT

制造商	部件名	数据表	功能描述
TRANSYS Electronics Lim...	MBR12040CT	133Kb / 2P	SCHOTTKY DIODES MODULE TYPE 120A
Naina Semiconductor ltd...	MBR12040CT	136Kb / 2P	Silicon Schottky Diode, 120A
America Semiconductor, ...	MBR12040CT	442Kb / 2P	HIGH POWER-SCHOTTKY RECTIFIERS
GeneSiC Semiconductor, ...	MBR12040CT	465Kb / 3P	Silicon Power Schottky Diode
GeneSiC Semiconductor, ...	MBR12040CT	723Kb / 3P	Silicon Power Schottky Diode

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