MBR20045CT datasheet(1/2 Pages) MICROSEMI

部件名	MBR20045CT

功能描述	Schottky PowerMod

PDF	2 Pages

Scroll/Zoom	100%

制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

标志

1 / 2 page

ROHS Compliant

copper

Baseplate: Nickel plated

Baseplate

A=Common Anode

Baseplate

Common Cathode

Baseplate

D=Doubler

CPT20130 - CPT20145

Electrical Characteristics

*Pulse test: Pulse width 300µsec, Duty cycle 2%

200 Amps

100 Amps

2000 Amps

2 Amps

0.68 Volts

0.64 Volts

4.0mA

5500pF

Thermal and Mechanical Characteristics

Schottky PowerMod

1100mA

Average forward current per pkg

Average forward current per leg

Maximum surge current per leg

Max peak forward voltage per leg

Max peak reverse current per leg

Typical junction capacitance

Maximum repetitive reverse current per leg

Storage temp range

Operating junction temp range

Max thermal resistance per leg

Typical thermal resistance (greased)

Terminal Torque

Mounting Base Torque (outside holes)

Weight

center hole must be torqued first

Mounting Base Torque (center hole)

OJC

OCS

STG

R

TJ

T

CJ

F(AV)

FSM

RM

R(OV)

I

FM

V

I

FM

V

I

F(AV)

I

H

Q

40V

35V

30V

45V

Working Peak

Reverse Voltage

*Add Suffix A for Common Anode, D for Doubler

CPT20140*

CPT20135*

CPT20130*

CPT20145*

Microsemi

Catalog Number

V

U

N

W

F

Reverse Voltage

Repetitive Peak

E

40V

35V

30V

45V

Notes:

U

C

B

G

R

A

C = 99°C, Square wave,

0JC = .40°C/W

C = 99°C, Square wave,

0JC = .20°C/W

30-40 inch pounds

2.8 ounces (75 grams) typical

8-10 inch pounds

T

8.3ms, half sine,

J = 125°C

f = 1 KHZ, 25°C

FM = 200A:

J = 25°C*

FM = 200A:

J = 125°C*

RRM,

J = 125°C*

RRM,

J = 25°C

R = 5.0V,

C = 25°C

35-50 inch pounds

-55°C to 150°C

Junction to case

Case to sink

0.40°C/W

0.08°C/W

V

T

V

I

T

R

1/4-28

Dia.

Notes

92.20

A

3.630

---

3.150 BSC

---

0.510

0.130

0.800

0.630

---

0.290

0.340

0.195

200 Amperes/30 to 45 Volts

Schottky Barrier Rectifier

Guard Ring Protection

Reverse Energy Tested

150° C Junction Temperature

0.312

0.180

0.600

V

W

U

---

0.275

Q

R

N

1.375 BSC

E 0.120

0.010

0.490

G

H

F

---

0.700

C

B

80.01 BSC

34.92 BSC

---

15.24

7.92

4.57

6.99

12.45

3.05

---

17.78

0.25

---

7.37

8.64

4.95

12.95

3.30

20.32

16.00

---

Dim. Inches

Max.

---

Min.

Millimeters

---

Min.

Max.

Part Number

MBR20030CT

200CNQ035

Industry

224CNQ035

MBR20035CT

200CNQ040

224CNQ040

MBR20040CT

200CNQ045

224CNQ045

MBR20045CT

January, 2010 - Rev. 4

www.microsemi.com

类似零件编号 - MBR20045CT

制造商	部件名	数据表	功能描述
Micro Commercial Compon...	MBR20045CT	414Kb / 3P	200 Amp Rectifier 20 to 100 Volts Schottky Barrier
TRANSYS Electronics Lim...	MBR20045CT	133Kb / 2P	SCHOTTKY DIODES MODULE TYPE 200A
Naina Semiconductor ltd...	MBR20045CT	136Kb / 2P	Silicon Schottky Diode, 200A
America Semiconductor, ...	MBR20045CT	446Kb / 2P	HIGH POWER -SCHOTTKY RECTIFIERS
GeneSiC Semiconductor, ...	MBR20045CT	461Kb / 3P	High Surge Capability

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