DRF1201

MOSFET Absolute Maximum Ratings

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain Source Voltage

1000

V

I

D

Continuous Drain Current T

26

A

R

DS(on)

Drain-Source On State Resistance

0.55

Ω

T

jmax

Operating Temperature

175

°C

MOSFET Dynamic Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

C

iss

Input Capacitance

2000

pF

C

oss

Output Capacitance

165

C

rss

Reverse Transfer Capacitance

75

MOSFET Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Thermal Resistance Junction to Case

0.53

°C/W

Thermal Resistance Junction to Heat Sink

0.141

T

JSTG

Storage Temperature

-55 to 150

°C

P

DHS

Maximum Power Dissipation @ T

1060

W

P

DC

Total Power Dissipation @ T

2830

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Figure 1, DRF1201 Simplified Circuit Diagram

The Simplified DRF1201 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), the contribution to

the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal

gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-

Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. Both the FN and IN pins are

referenced to the Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary

circuitry designed specifically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS.

Symbol

Parameter

Min

Typ

Max

Unit

C

out

Output Capacitance

2500

pF

R

out

Output Resistance

.8

Ω

L

out

Output Inductance

3

nH

F

MAX

Operating Frequency CL = 3000nF + 50Ω

30

MHz

F

MAX

Operating Frequency RL = 50Ω

50

Driver Output Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Thermal Resistance Junction to Case

1.5

°C/W

Thermal Resistance Junction to Heat Sink

2.5

T

JSTG

Storage Temperature

-55 to 150

°C

P

DJHS

Maximum Power Dissipation @ T

60

W

P

DJC

Total Power Dissipation @ T

100

Driver Thermal Characteristics