MMBT491 datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

MMBT491

NPN Silicon

General Purpose Transistor

01-June-2002 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

CHARACTERISTIC CURVES

10A

10mA

100mA

1mA

VCE(sat) vs

IC- Collector Current

IC-Collector Current

VBE(sat) vs

0.2

100mA

10mA

0.4

0.6

0.8

1.0

10A

hFE vs

IC-Collector Current

1mA

100mA

10mA

10A

100

300

200

400

10mA

1mA

IC- Collector Current

VBE(on)

vs IC

100mA

10A

0.6

0.8

1.0

1.2

0.4

0.2

IC-Collector Current

VCE(sat) vs IC

1mA

0.1

100mA

10mA

0.2

0.3

0.4

0.5

10A

0.1

Safe Operat ing Area

VCE - Collector Emitter Voltage (V)

0.1V

10V

100V

1mA

0.01

0.6

0.1

0.2

0.3

0.4

0.5

0.6

IC / IB = 10

+ 25 C

IC / IB = 50

IC / IB = 10

- 55 C

+ 25 C

+ 100 C

- 55 C

+ 25 C

+ 100 C

- 55 C

+ 25 C

+ 100 C

+ 25 C

- 55 C

+ 100 C

VCE = 5 V

1 s

100 ms

10 ms

1 ms

100 s

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