MMBT3904W datasheet(2/6 Pages) SECOS

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MMBT3904W

NPN Silicon

General Purpose Transistor

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(3)

DC Current Gain (1)

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

HFE

100

—

300

—

Collector–Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

—

0.2

0.3

Vdc

Base–Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

0.65

—

0.85

0.95

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

300

—

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

4.0

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

8.0

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hie

1.0

k ohms

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hre

0.5

8.0

X 10–4

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hfe

100

400

—

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hoe

1.0

mmhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)

—

5.0

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 3.0 Vdc, VBE = –0.5 Vdc,

—

Rise Time

( CC

, BE

IC = 10 mAdc, IB1 = 1.0 mAdc)

—

Storage Time

(VCC = 3.0 Vdc,

—

200

Fall Time

( CC

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

—

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-200

7 Rev. B

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