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MMBT4401W 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 MMBT4401W
功能描述  Switching Transistor
PDF  5 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

MMBT4401W 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  MMBT4401W Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH MMBT4401W Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH MMBT4401W Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH MMBT4401W Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH MMBT4401W Datasheet HTML 5Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
MMBT4401W
NPN Silicon
Switching Transistor
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
20
40
80
100
40
300
Collector – Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.4
0.75
Vdc
Base – Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
0.95
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
6.5
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10–4
Small – Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mmhos
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vdc, VEB = 2.0 Vdc,
td
15
ns
Rise Time
( CC
,
EB
,
IC = 150 mAdc, IB1 = 15 mAdc)
tr
20
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
225
ns
Fall Time
( CC
, C
,
IB1 = IB2 = 15 mAdc)
tf
30
ns
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
– 2.0 V
< 2.0 ns
0
1.0 to 100
µs,
DUTY CYCLE
≈ 2.0%
1.0 k
+ 30 V
200
CS* < 10 pF
+16 V
–14 V
0
< 20 ns
1.0 to 100
µs,
DUTY CYCLE
≈ 2.0%
1.0 k
+ 30 V
200
CS* < 10 pF
– 4.0 V
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
Page 2 of 5



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