Any changing of specification will not be informed individual

MMBT4403W

PNP Silicon

Switching Transistor

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc)

(IC = –1.0 mAdc, VCE = –1.0 Vdc)

(IC = –10 mAdc, VCE = –1.0 Vdc)

(IC = –150 mAdc, VCE = –2.0 Vdc)(3)

(IC = –500 mAdc, VCE = –2.0 Vdc)(3)

hFE

30

60

100

100

20

—

—

—

300

—

—

Collector – Emitter Saturation Voltage(3)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VCE(sat)

—

—

–0.4

–0.75

Vdc

Base – Emitter Saturation Voltage (3)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VBE(sat)

–0.75

—

–0.95

–1.3

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)

fT

200

—

MHz

Collector–Base Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

8.5

pF

Emitter–Base Capacitance

(VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

—

30

pF

Input Impedance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hie

1.5

15

k

Ω

Voltage Feedback Ratio

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hre

0.1

8.0

X 10–4

Small – Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hfe

60

500

—

Output Admittance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hoe

1.0

100

mmhos

SWITCHING CHARACTERISTICS

Delay Time

(VCC = –30 Vdc, VEB = –2.0 Vdc,

td

—

15

ns

Rise Time

( CC

,

EB

,

IC = –150 mAdc, IB1 = –15 mAdc)

tr

—

20

ns

Storage Time

(VCC = –30 Vdc, IC = –150 mAdc,

ts

—

225

ns

Fall Time

( CC

, C

,

IB1 = IB2 = –15 mAdc)

tf

—

30

ns

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUIT

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

+2 V

– 16 V

10 to 100

µs,

DUTY CYCLE = 2%

0

1.0 k

Ω

– 30 V

200

Ω

CS* < 10 pF

1.0 k

Ω

– 30 V

200

Ω

CS* < 10 pF

+ 4.0 V

< 2 ns

1.0 to 100

µs,

DUTY CYCLE = 2%

< 20 ns

+14 V

0

–16 V

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 2 of 5