Elektronische Bauelemente

S2N7002DW

115mA, 60V

Dual N-Channel MOSFET

19-May-2011 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

60

-

-

V

Gate-Threshold Voltage

1

-

2

V

Gate-Source Leakage

-

-

±1

μA

-

-

1

Zero Gate Voltage Drain Current

-

-

500

μA

On-State Drain Current

0.5

-

-

A

-

-

7.5

Drain-Source On Resistance

-

-

13.5

Ω

Forward Transconductance

80

-

-

ms

Body-Drain Diode Ratings

Diode Forward On–Voltage

-

-

-1.5

V

Source Current Continuous(Body Diode)

-

-

-115

mA

Source Current Pulsed

-

-

-800

mA

Dynamic Characteristics

Input Capacitance

-

-

50

Output Capacitance

-

-

25

Reverse Transfer Capacitance

-

-

5

pF

f=1MHz

Switching Characteristics

Turn-on Delay Time

-

-

20

Turn-off Delay Time

-

-

40

nS