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MPA201 数据表(PDF) 2 Page - Microsemi Corporation |
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MPA201 数据表(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page ![]() Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MPA201 ELECTRICAL CHARACTERISTICS OF SINGLE DIE 2 @ 25 °°°°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS BVEBO Emitter to Base Breakdown IE = 1 mA 3.5 - - V BVCES Collector to Emitter Breakdown IC = 10 mA 50 - - V BVCEO Collector to Emitter Breakdown IC = 10 mA 22 - - V hFE DC – Current Gain IC = 100 mA, VCE = 5 V 20 - - - COB Output Capacitance F = 1MHz, VCB = 28V - 2.0 3.0 pF NOTES: 2. Electrical characteristics are valid only with the single die inside of MPA201, the final unit is not capable of being tested. Internal Schematic of MPA201 |
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