MS652 datasheet(1/4 Pages) MICROSEMI

部件名	MS652

功能描述	5.0 Watts, 12.5 Volts, Class C UHF Applications

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制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

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Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

MS652/MS652S

5.0 Watts, 12.5 Volts, Class C

UHF Applications

GENERAL DESCRIPTION

The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon

NPN planar transistor designed primarily for UHF communications. It withstands

severe mismatch under normal operating conditions.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

°C

25 Watts

BVCBO Collector to Base Voltage

36 Volts

BVCEO Collector to Emitter Voltage

16 Volts

BVEBO Emitter to Base Voltage

4.0 Volts

IC

Collector Current

2.0 Amps

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

.280 4L STUD(M122), Epoxy sealed

MS652

.280 4LSL (M123), Epoxy sealed

MS652S

FUNCTIONAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

POUT

Power Out

5.0

-

W

Power Input

-

0.5

W

GP

Power Gain

F = 512 MHz

VCE = 12.5V

10.0

-

dB

η

Efficiency

POUT = 5W

60

-

%

ELECTRICAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

BVCES

Collector to Emitter Breakdown

IC = 25 mA, VBE = 0

36

-

V

BVCEO

Collector to Emitter Breakdown

IC = 50 mA, IB = 0

16

-

V

BVCBO

Collector to Base Breakdown

IC = 25 mA, IE = 0

36

-

V

BVEBO

Emitter to Base Breakdown

IE = 5 mA, IC = 0

4.0

-

V

ICES

Collector to Emitter Leakage

VCE = 15 V, VBE = 0

-

1.0

mA

hFE

DC – Current Gain

IC = 200 mA, VCE = 5 V

10

-

150

-

COB

Output Capacitance

F = 1MHz, VCB = 15V

-

15

pF

θjc1

Junction-Case Thermal Resistance

-

7

°C/W

NOTES: 1. At rated output power with MSC fixture.

Rev. A: May. 2010

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