MSiCSN10060D datasheet(1/3 Pages) MICROSEMI

部件名	MSiCSN10060D

功能描述	10A / 600V Silicon Carbide Dual Schottky Rectifier

PDF	3 Pages

Scroll/Zoom	100%

制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

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1 / 3 page

PRELIMINARY

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0106 Rev. 1 (091991)

Page 1 of 3

DEVICES

MSiCSN10060CC MSiCSN10060CA MSiCSN10060D

10A / 600V

Silicon Carbide

MSiCSS10060CC

MSiCSS10060CA

MSiCSS10060D

Dual Schottky Rectifier

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRWM

600

V

Surge Peak Reverse Voltage

VRSM

600

V

DC Blocking Voltage

VDC

600

V

Average Forward Current, 25°C

Io

10

Apk

Peak Surge Forward Current @ tp = 8.3ms, half

sinewave, Io = 0; VRM = 0

IFSM

50

Apk

Thermal Resistance, Junction to Case

Rθjc

°C/W

Thermal Resistance, Junction to Ambient

Rθja

°C/W

Operating Junction Temperature

Tj

-65°C to +225

°C

Storage Temperature

Tstg

-65°C to +225

°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Per Diode)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Forward Voltage*

IF = 1A, Tj = 25°C

IF = 2.5A, Tj = 25°C

IF = 5.0A, Tj = 25°C

IF = 10.0A, Tj = 25°C

VF

1.0

1.2

1.4

1.8

V

Reverse Current

VR = 600V, Tj = 25°C

VR = 600V, Tj = 175°C

IR

50

100

µA

Junction Capacitance

VR = 0V

f = 1MHz

Cj

550

pF

* Pulse test: Pulse width 300 µsec, Duty cycle 2%

Note:

1. Derate linearly @ tbd

TO-257

MSiCSN10060

• 1

• 2

• 3

CC – COMMON CATHODE

• 1

• 2

• 3

CA – COMMON ANODE

• 1

• 2

• 3

D - DOUBLER

U-3

(SURFACE MOUNT: SMD.5)

MSiCSS10060 ____

类似零件编号 - MSiCSN10060D

制造商	部件名	数据表	功能描述
Microsemi Corporation	MSICSN10060	175Kb / 4P	SILICON CARBIDE SCHOTTKY POWER RECTIFIER

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