IRF430

Prelim. 6/00

Website: http://www.semelab.co.uk

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

500

0.78

1.5

1.8

24

2.7

25

250

100

–100

610

135

65

16

40

26

820

30

40

80

30

4.5

18

1.4

900

7

Negligible

5.0

13

1.67

0.12

30

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Reverse Recovery Time

Forward Turn–On Time

V

V/°C

W

V

S (É)

mA

nA

pF

nC

ns

A

V

ns

mC

nH

°C/W

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d£ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Thermal Resistance Junction – Case

Thermal Resistance Case – Sink

Thermal Resistance Junction – Ambient

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS