Elektronische Bauelemente

SSG4825PE

P-Channel Mode Power MOSFET

31-Dec-2010 Rev. B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1

-

-

V

Gate-Body Leakage Current

-

-

±

1

μA

-

-

-1

μA

Zero Gate Voltage Drain Current

-

-

-5

μA

On-State Drain Current

1

-50

-

-

A

-

-

13

Drain-Source On-Resistance

1

-

-

19

mΩ

Forward Transconductance

1

-

29

-

S

Diode Forward Voltage

-

-0.8

-

V

Dynamic

2

Total Gate Charge

-

25

-

Gate-Source Charge

-

11

-

Gate-Drain Charge

-

17

-

nC

Input Capacitance

-

2300

-

Output Capacitance

-

600

-

Reverse Transfer Capacitance

-

300

-

pF

f= 1MHz

Turn-On Delay Time

-

15

-

Rise Time

-

13

-

Turn-Off Delay Time

-

100

-

Fall Time

-

54

-

nS

Notes:

1

Pulse test：PW ≦ 300

2

Guaranteed by design, not subject to production testing.