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STEW05CFN 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STEW05CFN 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() STEW05CFN Plastic Encapsulate ESD Protection Diodes Elektronische Bauelemente 27-Jun-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Working Peak Reverse Voltage VRWM - - 5.0 V Reverse Breakdown Voltage VBR 6.2 - 7.2 V IBR=1mA Reverse Leakage Current IR - - 0.5 µ A VR=5V Clamping Voltage (8/20 µs) VC - - 10 V IPP=2A Typical Junction Capacitance 1 CJ - 9 10 pF 0Vdc Bias f=1Mhz between pin 1,2 to 3 (Gnd) Note: 1. Capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration. CHARACTERISTIC CURVES |
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