STT3423P datasheet(2/4 Pages) SECOS

2 / 4 page

STT3423P

-5.7 A, -20 V, RDS(ON) 42 m

P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

23-Jul-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Gate-Threshold Voltage

VGS(th)

-0.4

VDS=VGS, ID= -250uA

Gate-Body Leakage

IGSS

±100

VDS= 0V, VGS= ±8V

Zero Gate Voltage Drain Current

IDSS

-1

VDS= -16V, VGS= 0V

-5

VDS= -16V, VGS=0 V, TJ= 55°C

On-State Drain Current

ID(on)

-20

VDS = -4.5V, VGS= -4.5 V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -5.7A

VGS= -2.5V, ID= -4.9A

VGS= -1.8V, ID= -4.1A

Forward Transconductance

gfs

VDS= -10V, ID= -4.9A

Diode Forward Voltage

VSD

-0.7

IS= 1.7A, VGS= 0V

DYNAMIC

Total Gate Charge

VDS= -10V, VGS= -4.5V,

ID= -5.7A

Gate-Source Charge

Qgs

1.8

Gate-Drain Charge

Qgd

1.9

Turn-on Delay Time

Td(on)

VDD= -10V, VGEN= -4.5V,

RL= 6, ID= -1A

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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