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STF701

TyPical Device chaRacTeRiSTicS

PaRameTeR

SymBol

value

uniTS

Peak Pulse Power (tp = 8/20µs) - See Figure 1

P

PP

175

Watts

Operating Temperature

T

L

-55 to 150

°C

Storage Temperature

T

STG

-55 to 150

°C

Typical Series Resistance per Line

R

40

Ohms

FiGuRe 1

Peak PulSe PoweR vS PulSe Time

t

175W, 8/20µs Waveform

0.1

1

10

100

1,000

10,000

10

100

1,000

10,000

PaRT

numBeR

Device

maRkinG

RaTeD

STanD-oFF

volTaGe

v

wm

volTS

minimum

BReakDown

volTaGe

@ 1ma

v

(BR)

volTS

maXimum

ReveRSe

leakaGe

cuRRenT

@v

wm

i

D

µa

maXimum

ReveRSe

leakaGe

cuRRenT

@3.3v

i

D

µa

TyPical

caPaciToR

(Per Junction)

@0v, 1mhz

cj

pF

maXimum

caPaciTance

(note 1)

@0v, 1mhz

c

ToT

pF

STF701

05F

5.0

6.0

5.0

1.0

40

160

noTeS

1. Capacitance measured between input and output per line.