BD136 datasheet(1/1 Pages) KEC

部件名	BD136

功能描述	EPITAXIAL PLANAR PNP TRANSISTOR

PDF	1 Pages

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制造商	KEC [KEC(Korea Electronics)]

网页	http://www.keccorp.com

标志

1 / 1 page

2003. 6. 16

1/1

SEMICONDUCTOR

TECHNICAL DATA

BD136

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 0

GENERAL PURPOSE APPLICATION.

FEATURES

High Current. (Max. : -1.5A)

Low Voltage (Max. : -45V)

DC Current Gain : hFE=40Min. @IC=-0.15A

Complementary to BD135.

MAXIMUM RATING (Ta=25 )

TO-126

H

J

MILLIMETERS

C

E

F

G

D

A

B

DIM

A

C

E

F

G

H

J

K

M

O

P

N

L

D

1. EMITTER

2. COLLECTOR

3. BASE

K

L

M

N

O

P

8.3 MAX

5.8

0.7

Φ3.2 0.1

3.5

11.0 0.3

2.9 MAX

1.0 MAX

1.9 MAX

0.75 0.15

2.3 0.1

0.65 0.15

1.6

3.4 MAX

B

1

23

+_

15.5 0.5

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-45

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-1.5

A

Base Current

IB

-0.5

A

Collector Power

Dissipation

Ta=25

PC

1.25

W

Tc=25

10

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-30V, IE=0

-

-0.1

A

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-10

A

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-30mA, IB=0

-45

-

V

DC Current Gain

hFE (1)

IC=-5mA, VCE=-2V

25

-

hFE (2)

IC=-150mA, VCE=-2V

40

-

250

hFE (3)

IC=-500mA, VCE=-2V

25

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-

-0.5

V

Base-Emitter Voltage

VBE

VCE=-2V, IC=-500mA

-

-1.0

V

Transition Frequency

fT

VCE=-5V, IC=-50mA

-

160

-

MHz

类似零件编号 - BD136

制造商	部件名	数据表	功能描述
Motorola, Inc	BD136	104Kb / 4P	Plastic Medium Power Silicon PNP Transistor
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STMicroelectronics	BD136	44Kb / 4P	PNP SILICON TRANSISTORS Jun-1997
Siemens Semiconductor G...	BD136	188Kb / 5P	PNP SILICON TRANSISTORS
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