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LLV321G-AL5-R 数据表(PDF) 4 Page - Unisonic Technologies |
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LLV321G-AL5-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 6 page ![]() LLV321 LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R105-041.A ELECTRICAL CHARACTERISTICS (Cont.) (TC= 25°C, VS = +5V, G = 2, RL = 10kΩ to VS/2, RF = 10kΩ, VO(DC) = VCC/2; unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT AC Performance Gain Bandwidth Product GBWP CL = 50pF, RL =2kΩ to VS/2 1.4 MHz Phase Margin Φm 73 deg Gain Margin Gm 12 dB Slew Rate SR 1.5 V/µs Input Voltage Noise en >50kHz 33 nV/√Hz DC Performance Input Offset Voltage (Note 1) VOS 1 7 mV Average Drift TCVOS 6 µV/°C Input Bias Current (Note 2) IB <1 nA Input Offset Current (Note 2) IOS <1 nA Power Supply Rejection Ratio (Note 1) PSRR DC 50 65 dB Open Loop Gain (Note 1) Av 50 70 dB Supply Current IS 100 150 µA Input Characteristics VCML Low 0 -0.4 V Input Common Mode Voltage Range (Note 1) VCMH High 3.8 3.6 V Common Mode Rejection Ratio (Note 1) CMRR 50 75 dB Output Characteristics VO RL = 2kΩ to VS/2; Low/High 0.036~4.95 V VOL RL = 10kΩ to VS/2; Low (Note 1) 0.1 0.013 V Output Voltage Swing VOH RL = 10kΩ to VS/2; High (Note 1) 4.98 4.9 V Io Sourcing; VO=0V 5 +34 mA Short Circuit Output Current (Note 1) Io Sinking; VO=5V 10 -23 mA Note: 1. Guaranteed by testing or statistical analysis at +25°C. 2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure. 3. Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters. |
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