L6230PDTR datasheet(8/24 Pages) STMICROELECTRONICS

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Electrical characteristics

L6230

8/24

Doc ID 18094 Rev 2

Electrical characteristics

(VS = 48 V, TA = 25 °C, unless otherwise specified)

Table 6.

Electrical characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VSth(ON)

Turn-on threshold

5.8

6.3

6.8

VSth(OFF)

Turn-off threshold

5.5

Quiescent supply current

All bridges OFF;

TJ = -25 °C to 125 °C

(1)

510

Tj(OFF)

Thermal shutdown temperature

165

°C

Output DMOS transistors

RDS(on)

High-side / low-side switch ON

resistance

TJ = 25 °C

0.73

0.85

TJ =125 °C

(1)

1.18

1.35

IDSS

Leakage current

DIAG-EN = LOW; OUT = VS

2mA

DIAG-EN = LOW; OUT = GND

-0.3

Source drain diodes

VSD

Forward ON voltage

ISD = 1.4 A, DIAG-EN = LOW

1.15

1.3

trr

Reverse recovery time

If = 1.4 A

300

tfr

Forward recovery time

200

Logic inputs (INx, ENx, DIAG-EN)

VIL

Low level logic input voltage

0.8

VIH

High level logic input voltage

IIL

Low level logic input current

GND logic input voltage

-10

µA

IIH

High level logic input current

7 V logic input voltage

µA

Switching characteristics

tD(ON)EN

Enable to output turn-on delay

time (2)

ILOAD = 1.4 A, resistive load

500

650

800

tD(OFF)EN

Enable to output turn-off delay time (2)

500

1000

tD(ON)IN

Other logic inputs to OUT turn-ON delay

time

1.6

µs

tD(OFF)IN

Other logic inputs to OUT turn-OFF

delay time

800

tRISE

Output rise time (2)

250

tFALL

Output fall time (2)

250

tDT

Dead time

0.5

µs

fCP

Charge pump frequency

TJ = -25 °C to 125 °C

(1)

0.6

MHz

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