EMZ1 datasheet(1/4 Pages) SECOS

部件名	EMZ1

功能描述	Silicon Epitaxial Planar

PDF	4 Pages

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 4 page

Elektronische Bauelemente

EMZ1

0.15 W,

±±±±150 mA, ±±±±60 V

Silicon Epitaxial Planar

Power Management (Dual Transistors)

28-Oct-2009 Rev. B

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

3

C

2

B

1

E

4

E

5

B

6

C

TR1

TR2

E

F

J

B

C

D

G

A

H

Z1

1

2

3

4

5

6

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

2SA1037AK and 2SC2412K are housed independently in a package.

Transistor elements independent, eliminating interference.

Mounting cost and area can be cut in half.

MARKING AND EQUIVALENT CIRCUIT

TR1 ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

7

V

Collector Current – Continuous

IC

0.15

A

Collector Power Dissipation

PC

0.15

W

Junction & Storage Temperature

TJ, TSTG

150, -55~150

℃

TR1 NPN ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector-Base Breakdown Voltage

V(BR)CBO

60

-

V

IC=50

µA, I

E=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

50

-

V

IC=1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

7

-

V

IE=50

µA, I

C=0

Collector Cut-Off Current

ICBO

-

0.1

µA

VCB=60V, IE=0

Emitter Cut-Off Current

IEBO

-

0.1

µA

VEB=7V, IC=0

DC Current Gain

hFE

120

-

560

VCE=6V, IC=1mA

Collector-Emitter Saturation Voltage

VCE(sat)

-

0.4

V

IC=50mA, IB=5mA

Transition Frequency

fT

-

180

-

MHz

VCE=12V, IC=2mA, f=100MHz

Collector Output Capacitance

Cob

-

2.0

3.5

pF

VCB=12V, IE=0, f=1MHz

TR2 ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current – Continuous

IC

-0.15

A

Collector Power Dissipation

PC

0.15

W

Junction & Storage Temperature

TJ, TSTG

150, -55~150

℃

TR2 PNP ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector-Base Breakdown Voltage

V(BR)CBO

-60

-

V

IC=-50

µA, I

E=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-50

-

V

IC=-1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

-6

-

V

IE=-50

µA, I

C=0

Collector Cut-Off Current

ICBO

-

-0.1

µA

VCB=-60V, IE=0

Emitter Cut-Off Current

IEBO

-

-0.1

µA

VEB=-6V, IC=0

DC Current Gain

hFE

120

-

560

VCE=-6V, IC=-1mA

Collector-Emitter Saturation Voltage

VCE(sat)

-

-0.5

V

IC=-50mA, IB=-5mA

Transition Frequency

fT

-

140

-

MHz

VCE=-12V, IC=-2mA, f=100MHz

Collector Output Capacitance

Cob

-

5

pF

VCB=-12V, IE=0, f=1MHz

SOT-563

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.50

1.70

F

0.09

0.16

B

1.50

1.70

G

0.45

0.55

C

0.525

0.60

H

0.17

0.27

D

1.10

1.30

J

0.10

0.30

E

-

0.05

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