MMBT2907AW datasheet(1/3 Pages) SECOS

部件名	MMBT2907AW

功能描述	PNP Silicon General Purpose Transistor

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 3 page

Elektronische Bauelemente

MMBT2907AW

PNP Silicon

General Purpose Transistor

20-Oct-2009 Rev. C

Page 1 of 3

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE



Complementary NPN Type Available(MMBT2222AW)



Epitaxial Planar Die Construction



Ideal for Medium Power Amplification and Switching

MARKING CODE

MMBT2907AW

= K3F, 20

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

-60

V

Collector to Emitter Voltage

VCEO

-60

V

Emitter to Base Voltage

VEBO

-5

V

Collector Currrent

IC

-600

mA

Total Power Dissipation

PD

200

mW

Junction, Storage Temperature

TJ, TSTG

+150, -55 ~ +150

℃

ELECTRICAL CHARACTERISTICS at Ta = 25°C

CHARACTERISTIC

TEST CONDITION

SYMBOL

MIN.

MAX.

UNIT

Collector-Base Breakdown Voltage

IC=-10μA, IE=0

BVCBO

-60

V

Collector-Emitter Breakdown Voltage

IC = -10 mA, IB = 0

BVCEO

-60

V

Emitter=Base Breakdown Voltage

IE=-10μA, IC=0

BVEBO

-5

V

Collector Cutoff Current

VCB=-50V, IE=0

ICBO

-100

nA

Collector Cutoff Current

VEB=-30V, IB=0

ICES

-100

nA

Emitter Cutoff Current

VEB=-3V, IC=0

IEBO

-100

nA

VCE=-10V, IC=-0.1mA

hFE1

75

VCE=-10V, IC=-1mA

hFE2

100

VCE=-10V, IC=-10mA

hFE3

100

VCE=-10V, IC=-150mA

hFE4

100

300

DC Current Gain

VCE=-10V, IC=-500mA

hFE5

50

IC=-150mA, IB=-15mA

VCE(sat)

-0.4

V

Collector-emitter Saturation Voltage

IC=-500mA, IB=-50mA

VCE(sat)

-1.6

V

IC=-150mA, IB=-15mA

VBE(sat)

-0.6

-1.3

V

Base-Emitter Saturation Voltage

IC=-500mA, IB=-50mA

VBE(sat)

-2.6

V

Transition Frequency

VCE=-20V, IC=-50mA, f=100MHz

fT

200

MHz

Output Capacitance

VCB=-10V, IE=0, f=0.1MHz

Cobo

8

pF

Input Capacitance

VEB=-2V, IC=0, f=0.1MHz

Cib

30

pF

Delay Time

Td

10

nS

Rise Time

Vcc=-30V, VBE(Off)=-1.5V

IC=-150mA, IB1=-15mA

Tr

40

nS

Storage Time

TS

80

nS

Fall Time

Vcc=-30V, IC=-150mA

IB1=- IB2 =-15mA

TF

30

nS

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.80

2.20

G

0.100 REF.

B

1.80

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.25

D

0.80

1.10

K

-

E

1.20

1.40

L

0.650 TYP.

F

0.20

0.40

SOT-323

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