Any changing of specification will not be informed individual

MMBT4401

NPN Silicon

Switching Transistor

6.0

8.0

10

0

4.0

2.0

0.1

2.0 5.0

10

20

50

1.0

0.5

0.2

0.01 0.02 0.05

100

Figure 9. Frequency Effects

SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Bandwidth = 1.0 Hz

IC = 1.0 mA, RS = 150 Ω

IC = 500 µA, RS = 200 Ω

IC = 100 µA, RS = 2.0 kΩ

IC = 50 µA, RS = 4.0 kΩ

RS = OPTIMUM

100 k

50

100 200

500

1.0 k 2.0 k

5.0 k 10 k

20 k

50 k

6.0

8.0

10

0

4.0

2.0

Figure 10. Source Resistance Effects

f = 1.0 kHz

IC = 50 µA

IC = 100 µA

IC = 500 µA

IC = 1.0 mA

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 255C

This group of graphs illustrates the relationship between

hfe and other ªhº parameters for this series of transistors. To

obtain these curves, a high±gain and a low±gain unit were

selected from the MMBT4401 lines, and the same units were

used to develop the correspondingly numbered curves on

each graph.

Figure 11. Current Gain

0.1

0.2

0.5 0.7 1.0

2.0 3.0

10

0.3

100

200

20

70

50

300

Figure 12. Input Impedance

50 k

500

30

5.0 7.0

20 k

10 k

5.0 k

2.0 k

1.0 k

0.1

0.2

0.5 0.7 1.0

2.0 3.0

10

0.3

5.0 7.0

Figure 13. Voltage Feedback Ratio

0.1

0.2

0.5 0.7 1.0

2.0

3.0

10

0.3

0.2

10

100

1.0

5.0 7.0

50

20

10

5.0

2.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

0.2

0.5 0.7 1.0

2.0 3.0

10

0.3

5.0 7.0

MMBT4401 UNIT 1

MMBT4401 UNIT 2

MMBT4401 UNIT 1

MMBT4401 UNIT 2

Figure 14. Output Admittance

MMBT4401 UNIT 1

MMBT4401 UNIT 2

MMBT4401 UNIT 1

MMBT4401 UNIT 2

RS, Source Resistance (OHMS)

f, Frequency (kHz)

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2004 Rev. B

Page 4 of 5