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MMDT2907A 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 MMDT2907A
功能描述  PNP Silicon Multi-Chip Transistor
PDF  3 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

MMDT2907A 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  MMDT2907A Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH MMDT2907A Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH MMDT2907A Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
MMDT2907A
PNP Silicon
Multi-Chip Transistor
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, Collector Current (mA)
0.3
0.5
0.7
1.0
3.0
0.2
–0.1
TJ = 125°C
25
°C
–55
°C
VCE = –1.0 V
VCE = –10 V
2.0
–0.2
–0.3
–0.5 –0.7
–1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70
–100
–200
–300
–500
Figure 4. Collector Saturation Region
IB, Base Current (mA)
–0.4
–0.6
–0.8
–1.0
–0.2
0
IC = –1.0 mA
–0.005
–10 mA
–0.01
–100 mA
–500 mA
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0 –10
–20
–30
–50
Figure 5. Turn–On Time
IC, Collector Current
300
–5.0
Figure 6. Turn–Off Time
IC, Collector Current (mA)
–5.0
200
100
70
50
30
20
10
7.0
5.0
3.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300
–500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = –30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
200
tf
t
′s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jan-2006 Rev. B
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