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SSD9575 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 SSD9575
功能描述  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SSD9575 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Notes: Pulse width limited by Max. junction temperature.
1.
56
159
-9 A, VGS=0V.
-9A, VGS=0V.
nC
nS
_
IS=
V
-1.2
_
_
IS=
dl/dt=100A/us
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
VSD
_
2
17
5
6
10
19
46
53
1660
160
100
nC
nS
pF
VGS=0V
VDS=25V
f=1.0MHz
VDD=-30V
ID=-9A
VGS=-10V
RG=3.3
RD=3.3
Ω
Ω
ID=-9A
VDS=-48V
VGS=-4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
90
120
m
14
Ω
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-9A
_
_
S
VDS=-10V, ID=-9A
_
_
_
_
27
2660
60
0.06
1.0
-3.0
100
-1
-25
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=-250uA
VGS= 25V
±
VDS=-60V,VGS=0
VDS=-48V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
-
-
-
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gfs
RDS(ON)
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
IDSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 )
VGS(th)
IGSS
Forward Transconductance
oC
oC
2
2
2
Source-Drain Diode
2.Pulse width 300us, dutycycle 2%.
≦
≦
h
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
2
Elektronische Bauelemente
SSD9575
-15A, -60V,RDS(ON)90m
P-Channel Enhancement Mode Power Mos.FET
Ω



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