SSG4801

Dual-P Enhancement Mode Power MOSFET

Elektronische Bauelemente

19-Jan-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min

Typ

Max

Unit

Test condition

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-0.5

-

-1.0

V

Forward Transconductance

2

-

11

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage

Current

-

-

-1

μA

-

-

-5

μA

Static Drain-Source On-Resistance

2

-

-

50

mΩ

-

-

65

-

-

120

Total Gate Charge

2

-

9.5

-

nC

Gate-Source Chagre

-

2.0

-

Gate-Drain (“Miller”) Change

-

3.1

-

Turn-on Delay Time

2

-

12

-

nS

Rise Time

-

4

-

Turn-off Delay Time

-

37

-

Fall Time

-

12

-

Input Capacitance

-

952

-

pF

f=1.0MHz

Output Capacitance

-

103

-

Reverse Transfer Capacitance

-

77

-

Source-Drain Diode

Forward On Voltage

2

-

-

-1.2

V

Notes：

1 Surface Mounted on FR4 Board, t

10sec.

≦

2. Pulse width

300 μs, duty cycle

2

≦≦

%