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88NXXG-AF5-R 数据表(PDF) 5 Page - Unisonic Technologies

部件名 88NXXG-AF5-R
功能描述  BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
PDF  8 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

88NXXG-AF5-R 数据表(HTML) 5 Page - Unisonic Technologies

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88NXX
Preliminary
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
5 of 8
www.unisonic.com.tw
QW-R502-368.c
ELECTRICAL CHARACTERISTICS(Cont.) (Ta=25°C unless otherwise specified)
Detection Voltage: 2.1V
PARAMETER
SYMBOL
TEST
CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Detection Voltage (Note 1)
-VDET
1
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
V
Hysteresis Width
VHYS
1
-VDET
×0.03
-VDET
×0.05
-VDET
×0.08
V
Current Consumption
ISS
2
VDD=3.5 V
5
μA
Operating Voltage
VDD
1
0.95
10.0
V
Output Current
IOUT
3
Output transistor
Nch, VDS=0.5V, VDD=1.2V
0.59
1.36
mA
Leakage Current
ILEAK
3
Output transistor
Nch, VDS=10V, VDD=10V
0.1
μA
Detection Voltage Temperature
Coefficient (Note 2)
DET
DET
V
-
×
Ta
Δ
V
-
Δ
1
Ta=-40°C ~ +85°C
±100
±350 ppm/°C
Delay Time
tD
4
VDD=3.5V, CD=4.7 nF
27
42
ms
Detection Voltage: 2.4V
PARAMETER
SYMBOL
TEST
CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Detection Voltage (Note 1)
-VDET
1
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
V
Hysteresis Width
VHYS
1
-VDET
×0.03
-VDET
×0.05
-VDET
×0.08
V
Current Consumption
ISS
2
VDD=3.5V
5
μA
Operating Voltage
VDD
1
0.95
10.0
V
Output Current
IOUT
3
Output transistor
Nch, VDS=0.5V, VDD=1.2V
0.59
1.36
mA
Leakage Current
ILEAK
3
Output transistor
Nch, VDS=10V, VDD=10V
0.1
μA
Detection Voltage Temperature
Coefficient (Note 2)
DET
DET
V
-
×
Ta
Δ
V
-
Δ
1
Ta=-40°C ~ +85°C
±100
±350 ppm/°C
Delay Time
tD
4
VDD=3.5V, CD=4.7 nF
27
42
ms
Detection Voltage: 2.7V
PARAMETER
SYMBOL
TEST
CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Detection Voltage (Note 1)
-VDET
1
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
V
Hysteresis Width
VHYS
1
-VDET
×0.03
-VDET
×0.05
-VDET
×0.08
V
Current Consumption
ISS
2
VDD=4.5V
5
μA
Operating Voltage
VDD
1
0.95
10.0
V
Output Current
IOUT
3
Output transistor
Nch, VDS=0.5V, VDD=2.4V
2.88
4.98
mA
Leakage Current
ILEAK
3
Output transistor
Nch, VDS=10V, VDD=10V
0.1
μA
Detection Voltage Temperature
Coefficient (Note 2)
DET
DET
V
-
×
Ta
Δ
V
-
Δ
1
Ta=-40°C ~ +85°C
±100
±350 ppm/°C
Delay Time
tD
4
VDD=4.5V, CD=4.7 nF
12
27
ms



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