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UR5517G-SM2-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UR5517G-SM2-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 6 page ![]() UR5517 Preliminary LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R102-041.a ABSOLUTE MAXIMUM RATING (unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage(VIN,VLDOIN,VDDQSNS,S3,S5) -0.3~6 V Power Ground Output for the VTT Output PGND -0.3~0.3 V Output Voltage(VTT,VTTREF) VTT,VTTREF -0.3~VLDOIN+0.3 V Junction Temperature TJ 160 ℃ Storage Temperature TSTG -55 ~ +160 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. RECOMMENDED OPERATING CONDITIONS (Note1, 2) PARAMETER SYMBOL MIN TYP MAX UNIT Input Voltage VIN 3 5.5 V STR and Shutdown Voltage S3,S5 -0.1 5.5 V VDDQ Sense Input VDDQSNS 1.3 3.6 V Power Supply for the VTT and VTTREF Output Stage VLDOIN 1.2 3.6 V Power Ground Output for the VTT Output PGND -0.1 0.1 V Operating Temperature TA -40 85 ℃ 1. All voltage values are with respect to the network ground terminal unless otherwise noted. Note: 2. Please always keep VLDOIN,VTTSNS,VDDQSNS,S3,S5 lower than VIN on operation. ELECTRICAL CHARACTERISTICS (VIN=5V,VLDOIN=VDDQSNS=2.5V, TA=25℃.Unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT IVIN S5=Hi,S3=Hi, no load(Normal) 0.5 0.8 2 mA IVINSTB S5=Hi,S3=Lo, no load(Standby) 110 200 uA Current of VIN IVINSDN S5=Lo,S3=Lo, no load(Shutdown) 1 uA IVLDOIN S5=Hi,S3=Hi, no load(Normal) 0.03 2 mA IVLDOINSTB S5=Hi,S3=Lo, no load(Standby) 0.1 10 uA Current of VLDOIN IVLDOINSDN S5=Lo,S3=Lo, no load(Shutdown) 0.1 1 uA Input Impedance of VDDQSNS ZVDDQSNS S5=Hi,S3=Hi 200 kΩ Input Current of VTTSNS IVTTSNS S5=Hi,S3=Hi 0.3 1 uA DDR1(VLDOIN=VDDQSNS=2.5V) 1.25 DDR2(VLDOIN=VDDQSNS=1.8V) 0.9 Output Voltage of VTT VTT DDR3(VLDOIN=VDDQSNS=1.5V) 0.75 V IVTT =0 -20 20 ∣ IVTT < ∣ 1.5A -30 30 Load Regulation of VTT (VTTREF-VTT) VosVTT ∣ IVTT <3A ∣ -40 40 mV VTT=VDDQSNS/2*0.95,PGOOD=HI 3 4 Source Current Limit of VTT IVTTOCLSRC VTT=0 1.5 2 A VTT=VDDQSNS/2*1.05,PGOOD=HI 3 4 Sink Current Limit of VTT IVTTOCLSNK VTT=VDDQSNS 1.5 2 A Leakage Current of VTT IVTTLK S5=Hi,S3=Lo 0.01 uA Discharge Current of VTT IVTTDIS S5=Lo, VDDQSNS=0V,VTT=0.5V 10 20 mA DDR1(VLDOIN=VDDQSNS=2.5V) 1.25 DDR2(VLDOIN=VDDQSNS=1.8V) 0.9 Output Voltage of VTTREF VTTREF DDR3(VLDOIN=VDDQSNS=1.5V) 0.75 V Load Regulation of VTTREF ΔVTTREF ∣ IVTTREF < ∣ 10mA -20 20 mV High Level Input Voltage VIH S3 & S5 pin 1.6 Low Level Input Voltage VIL S3 & S5 pin 1 V Logic Input Leakage Current IILEAK S3 & S5 pin -1 1 uA Thermal Shutdown Temperature TSD VIN=3V~5.5V 160 Thermal Shutdown Hysteresis ΔTSD VIN=3V~5.5V 20 ℃ |
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