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SMN03T80IS 数据表(PDF) 2 Page - KODENSHI_AUK CORP.

部件名 SMN03T80IS
功能描述  SWITCHING REGULATOR APPLICATION
PDF  8 Pages
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制造商  KODENSHI [KODENSHI_AUK CORP.]
网页  http://www.kodenshi.co.kr
标志 KODENSHI - KODENSHI_AUK CORP.

SMN03T80IS 数据表(HTML) 2 Page - KODENSHI_AUK CORP.

  SMN03T80IS Datasheet HTML 1Page - KODENSHI_AUK CORP. SMN03T80IS Datasheet HTML 2Page - KODENSHI_AUK CORP. SMN03T80IS Datasheet HTML 3Page - KODENSHI_AUK CORP. SMN03T80IS Datasheet HTML 4Page - KODENSHI_AUK CORP. SMN03T80IS Datasheet HTML 5Page - KODENSHI_AUK CORP. SMN03T80IS Datasheet HTML 6Page - KODENSHI_AUK CORP. SMN03T80IS Datasheet HTML 7Page - KODENSHI_AUK CORP. SMN03T80IS Datasheet HTML 8Page - KODENSHI_AUK CORP.  
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Rev. date: 16-AUG-11
KSD-T6Q010-000
www.auk.co.kr
2 of 8
Thermal Characteristics
Characteristic
Symbol
Rating
Unit
Thermal resistance, junction to case
Rth(j-c)
Max. 1.78
C/W
Thermal resistance, junction to ambient
Rth(j-a)
Max. 110
Electrical Characteristics (T
C=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250uA, VGS=0
800
-
-
V
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
2
-
4
V
Drain-source cut-off current
IDSS
VDS=800V, VGS=0V
-
-
10
uA
VDS=640V, Tc=125C
-
-
100
uA
Gate leakage current
IGSS
VDS=0V, VGS=30V
-
-
100
nA
Drain-source on-resistance
RDS(ON)
VGS=10V, ID=1.5A
-
3.36
4.2
Forward transfer conductance
(Note 4)
gfs
VDS=30V, ID=1.5A
-
3.7
-
S
Input capacitance
Ciss
VDS=25V, VGS=0V,
f=1.0MHz
-
696
-
pF
Output capacitance
Coss
-
65
-
Reverse transfer capacitance
Crss
-
10.2
-
Turn-on delay time
(Note 4,5)
td(on)
VDD=400V, ID=3A
RG=25Ω
-
48
-
ns
Rise time
(Note 4,5)
tr
-
36
-
Turn-off delay time
(Note 4,5)
td(off)
-
106
-
Fall time
(Note 4,5)
tf
-
41
-
Total gate charge
(Note 4,5)
Qg
VDS=640V, VGS=10V
ID=3A
-
19
-
nC
Gate-source charge
(Note 4,5)
Qgs
-
4
-
Gate-drain charge
(Note 4,5)
Qgd
-
7.6
-
Source-Drain Diode Ratings and Characteristics (T
C=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Source current (DC)
IS
Integral reverse diode
in the MOSFET
-
-
3
A
Source current (Pulsed)
ISM
-
-
12
A
Forward voltage
VSD
VGS=0V, IS=3A
-
-
1.5
V
Reverse recovery time
(Note 4,5)
trr
IS=3A, VGS=0V
dIF/dt=100A/us
-
372
-
ns
Reverse recovery charge
(Note 4,5)
Qrr
-
1.8
-
uC
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=42mH, IAS=3A, VDD=50V, RG=25, Starting TJ=25C
3. ISD≤3A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25C
4. Pulse test: Pulse width
≤300us, Duty cycle≤2%
5. Essentially independent of operating temperature typical characteristics
SMN03T80IS



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