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MMBT3904LP 数据表(PDF) 3 Page - Diodes Incorporated

部件名 MMBT3904LP
功能描述  40V NPN SURFACE MOUNT TRANSISTOR
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

MMBT3904LP 数据表(HTML) 3 Page - Diodes Incorporated

  MMBT3904LP Datasheet HTML 1Page - Diodes Incorporated MMBT3904LP Datasheet HTML 2Page - Diodes Incorporated MMBT3904LP Datasheet HTML 3Page - Diodes Incorporated MMBT3904LP Datasheet HTML 4Page - Diodes Incorporated MMBT3904LP Datasheet HTML 5Page - Diodes Incorporated  
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MMBT3904LP
Document number: DS31835 Rev. 3 - 2
3 of 5
www.diodes.com
February 2011
© Diodes Incorporated
MMBT3904LP
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
60
⎯
V
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5)
BVCEO
40
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
6.0
⎯
V
IE = 10μA, IC = 0
Collector Cutoff Current
ICEX
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
0.65
⎯
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
8.5
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
k
Ω
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.5
8.0
x 10
-4
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
1.0
40
μS
Current Gain-Bandwidth Product
fT
300
⎯
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
tr
⎯
35
ns
Storage Time
ts
⎯
200
ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time
tf
⎯
50
ns
Notes:
5. Short duration pulse test used to minimize self-heating effect.
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
01
2
3
4
5
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I = 2mA
B
I = 0.2mA
B
I = 0.4mA
B
I = 0.6mA
B
I = 0.8mA
B
I = 1.6mA
B
I = 1.4mA
B
I = 1.2mA
B
I = 1.8mA
B
I = 1mA
B
0.1
1
10
100
1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
100
200
300
400
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
V
= 1V
CE



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