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MMBT3906LP 数据表(PDF) 3 Page - Diodes Incorporated

部件名 MMBT3906LP
功能描述  40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  5 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

MMBT3906LP 数据表(HTML) 3 Page - Diodes Incorporated

  MMBT3906LP Datasheet HTML 1Page - Diodes Incorporated MMBT3906LP Datasheet HTML 2Page - Diodes Incorporated MMBT3906LP Datasheet HTML 3Page - Diodes Incorporated MMBT3906LP Datasheet HTML 4Page - Diodes Incorporated MMBT3906LP Datasheet HTML 5Page - Diodes Incorporated  
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MMBT3906LP
Document number: DS31836 Rev. 3 - 2
3 of 5
www.diodes.com
February 2011
© Diodes Incorporated
MMBT3906LP
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-40
⎯
V
IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5)
BVCEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-5.0
⎯
V
IE = -10μA, IC = 0
Collector Cutoff Current
ICEX
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ICBO
⎯
-50
nA
VCB = -30V, IE = 0
Base Cutoff Current
IBL
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
hFE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
-0.65
⎯
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
k
Ω
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.1
10
x 10
-4
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
3.0
60
μS
Current Gain-Bandwidth Product
fT
300
⎯
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
35
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time
tr
⎯
35
ns
Storage Time
ts
⎯
225
ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time
tf
⎯
75
ns
Notes:
5. Short duration pulse test used to minimize self-heating effect.
0
0.04
0.08
0.12
0.16
0.20
01
2
3
4
5
-V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I = -2mA
B
I = -0.2mA
B
I = -0.4mA
B
I = -0.6mA
B
I = -0.8mA
B
I = -1.6mA
B
I = -1.4mA
B
I = -1.2mA
B
I = -1.8mA
B
I = -1mA
B
0.1
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
300
350
400
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
V
= 1V
CE



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