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AS3PD thru AS3PM

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Vishay General Semiconductor

Revision: 13-Jul-11

1

Document Number: 88837

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Standard Avalanche

Surface Mount Rectifiers

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Glass passivated chip junction

• Controlled avalanche characteristics

• Low leakage current

• High forward surge capability

• AEC-Q101 qualified

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Notes

PRIMARY CHARACTERISTICS

3.0 A

200 V to 1000 V

70 A

20 mJ

0.90 V

175 °C

TO-277A (SMPC)

Anode 1

Anode 2

Cathode

K

K

2

1

eSMP

PARAMETER

SYMBOL

AS3PD

AS3PG

AS3PJ

AS3PK

AS3PM

UNIT

Device marking code

AS3D

AS3G

AS3J

AS3K

AS3M

Maximum repetitive peak reverse voltage

200

400

600

800

1000

V

Maximum DC forward current (fig. 1)

3.0

A

2.1

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

70

A

Non-repetitive avalanche energy

20

mJ

30

Operating junction and storage temperature range

- 55 to + 175

°C