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FN9001.4

September 25, 2008

Die Characteristics

DIE DIMENSIONS

3090µm x 4080µm (121.6 mils x 159.0 mils)

Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS

Glassivation

Type: Phosphorus Silicon Glass (PSG)

Thickness: 8.0kA ± 1.0kA

Top Metallization

Type: AlSiCu

Thickness: 16.0kA ± 2kA

Substrate

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density

Transistor Count

582

Metallization Mask Layout

IS-1845ASRH

NOTES:

3. Both the GND pads must be bonded to ground.

4. The OUT double-sized bond pad must be double bonded for

current sharing purposes.

5. The OSCGND double-sized bond pad must be double bonded to

ground for current sharing purposes.

VFB

COMP

VREF

VC

VCC

OUT

GND

GND

OSCGND

RTCT

ISENSE

IS-1845ASRH