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2SCR522EB 数据表(PDF) 1 Page - Rohm |
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2SCR522EB 数据表(HTML) 1 Page - Rohm |
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1 / 3 page ![]() 1/2 www.rohm.com ○ c 2010 ROHM Co., Ltd. All rights reserved. 2010.09 - Rev.A General purpose transistor(20V,0.2A) 2SCR522M / 2SCR522EB / 2SCR522UB Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Packaging specifications Packaging Type Code Taping Basic ordering unit (pieces) T2L 8000 Taping TL 3000 Taping TL 3000 2SCR522M 2SCR522EB 2SCR522UB Package VMT3 EMT3F UMT3F Type Absolute maximum ratings (Ta=25 C) Inner circuit Symbol Limits Unit VCBO 20 V 20 V V VCEO VEBO 5 mA 400 IC ICP mA 200 Tj 150 °C Tstg −55 to +150 °C PD 200 150 mW mW ∗1 ∗2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Range of storage temperature Power dissipation ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land Parameter 2SCR522M,2SCR522EB 2SCR522UB Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) fT Cob 20 20 5 − − − − − − − − − − 400 0.12 2 − − − 0.1 0.1 0.30 − − V V V μA μA V MHz pF IC =50μA IC =1mA IE =50μA VCB =20V VEB =5V IC =100mA, IB=10mA hFE 120 − 560 − VCE =10V, IE=−10mA, f=100MHz VCE =2V, IC=1mA VCB =10V, IE=0A, f=1MHz Output capacitance Transition frequency Collector-emitter saturation voltage Emitter cut-off current Collector cut-off current Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector-base breakdown voltage DC current gain VMT3 EMT3F (1) (2) (3) UMT3F 2.0 0.32 0.65 0.65 1.3 (1) (2) (3) 0.9 0.13 Abbreviated symbol : NC Abbreviated symbol : NC Abbreviated symbol : NC (1) (3) (2) (1) Base (2) Emitter (3) Collector |
类似零件编号 - 2SCR522EB |
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类似说明 - 2SCR522EB |
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