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Midium Power Transistors (50V / 3A)

2SCR533D



Structure



Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor



Features

1) Low saturation voltage

2) High speed switching



Applications

Driver



Inner circuit (Unit : mm)

Package

CPT3

Code

TL

Basic ordering unit (pieces)

2500



Absolute maximum ratings (Ta=25°C)

Symbol

Limits

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

6V

DC

3A

Pulsed

6A

1W

10

W

Junction temperature

150

°C

Range of storage temperature

-55 to 150

°C

*1 Pw=10ms, Single Pulse

*2 Mounted on a substrate



Packaging specifications

Type

Parameter

Collector current

Power dissipation

CPT3

(SC-63)

<SOT-428>

6.5

2.3

(2)

(3)

0.65

(1)

0.75

2.3

0.9

5.1

2.3

0.5

1.0

0.5

*1

*2

*3

(1) Base

(2) Collector

(3) Emitter

(1) Base

(2) Collector

(3) Emitter

(1)

(3)

(2)

1/5

2010.12 - Rev.A