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GP2S09 数据表(PDF) 2 Page - Sharp Corporation

部件名 GP2S09
功能描述  Subminiature Photointerrupter
PDF  5 Pages
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制造商  SHARP [Sharp Corporation]
网页  http://sharp-world.com/
标志 SHARP - Sharp Corporation

GP2S09 数据表(HTML) 2 Page - Sharp Corporation

  GP2S09 Datasheet HTML 1Page - Sharp Corporation GP2S09 Datasheet HTML 2Page - Sharp Corporation GP2S09 Datasheet HTML 3Page - Sharp Corporation GP2S09 Datasheet HTML 4Page - Sharp Corporation GP2S09 Datasheet HTML 5Page - Sharp Corporation  
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s Absolute Maximum Ratings
(Ta = 25˚C)
(Ta = 25˚C )
∗5 GP2S24 and GP2S26 and GP2S27 don't
The ranking of collector current shall be classi-
fied into the following 6 ranks.
∗4 Without reflective object
Rank
B
C
A or B
B or C
A, B or C
The hatched area more than
in the figure below.
GP2S26
The hatched area more than
edges of package as shown
in the figure below.
GP2S27
Soldering area
The hatched area more than
edges of package as shown
in the figure below.
Test Condition and
Arrangement for
Collector Current
s Electro-optical Characteristics
∗5A
GP2S09/GP2S24/GP2S26/GP2S27
2.0mm
2.0mm
0.5mm
0.5mm
1mm-thick glass
(GP2S09, GP2S24, GP2S26, GP2S27)
Collector-current I C (
µ A)
20 to 42
34 to 71
58 to 120
20 to 71
34 to 120
20 to 120
GP2S09 , GP2S24
1mm∗2 away from the lower
4mm
∗2 GP2S09:
∗1 Within 5 seconds (Soldering areas for each model are shown below )
0.5mm away from the both
∗3 The condition and arrangement of the reflective object are shown below.
have A rank.
Parameter
Rating
Unit
Input
Forward current
50
mA
Reverse voltage
6
V
Power dissipation
75
mW
Output
Collector-emitter voltage
35
V
Emitter-collector voltage
6
V
Collector current
20
mA
Collector power dissiipation
75
mW
Total power dissipation
100
mW
Operating temperature
- 20 to + 85
˚C
Storage temperature
- 40 to + 100
˚C
∗1Soldering temperature
260
˚C
Symbol
IF
VR
VCEO
VECO
IC
P C
Ptot
T opr
T stg
T sol
P
edge of package as shown
2.0mm away from the both
Al evaporation
Soldering area:
Soldering area:
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
VF
IF = 20mA
-
1.2
1.4
V
Reverse current
IR
V R =6V
-
-
10
µ A
Output
Collector dark current
ICEO
V CE = 20V
-
10-9
10 -7
A
Transfer
charac-
teristics
∗3Collector current
IC
IF = 4mA, VCE = 2V
20
45
120
µ A
Response time
Rise time
t r
V CE = 2V, I C = 100
µ A
RL =1k
Ω , d = 1mm
-
20
100
µ s
Fall time
tf
-
20
100
µ s
∗4Leak current
I LEAK
IF = 4mA, V CE = 2V
-
-
0.1
µ A



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