2SD874-R datasheet(1/2 Pages) MCC

部件名	2SD874-R

功能描述	NPN Silicon Power Transistors

PDF	2 Pages

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制造商	MCC [Micro Commercial Components]

网页	http://www.mccsemi.com

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1 / 2 page

2SD874-Q

NPN Silicon

Power Transistors

Features

•

Power amplifier applications

Maximum Ratings

Symbol

Rating

Unit

VCEO

Collector-Emitter Voltage

25

V

VCBO

Collector-Base Voltage

30

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

1

A

PC

Collector power dissipation

500

mW

TJ

Junction Temperature

-55 to +150

TSTG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Type

Max

Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=2mAdc, IB=0)

25

---

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=10uAdc, IE=0)

30

---

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=10uAdc, IC=0)

5

---

Vdc

ICBO

Collector-Base Cutoff Current

(VCB=20Vdc,IE=0)

---

0.1

uAdc

IEBO

Emitter-Base Cutoff Current

(VEB=4Vdc, IC=0)

---

0.1

uAdc

ON CHARACTERISTICS

hFE

Forward Current Transfer ratio

(IC=500mAdc, VCE=10Vdc)

(IC=1.0Adc, VCE=5Vdc)

85

50

---

340

---

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=500mAdc, IB=50mAdc)

---

0.4

Vdc

VBE(sat)

Base-Emitter Saturation Voltage

(IC=500mAdc,IB=50mAdc)

---

1.2

Vdc

fT

Transistor Frequency

(IC=50mAdc, VCE=10Vdc, f=200MHz)

---

200

---

MHz

Cob

Collector Output Capacitance

(VCB=10Vdc, IE=0, f=1MHz)

---

20

---

pF

Classification OF hFE(1)

Rank

Q

R

S

Range

85-170

120-240

170-340

Marking

ZQ

ZR

ZS

25

SOT-89

1. Base

2. Collector

3. Emitter

Revision: A

2011/01/01

omponents

20736 Marilla

Street Chatsworth

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MCC

TM

Micro Commercial Components

www.mccsemi.com

1 of 2

B

A

E

D

G

H

F

K

J

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1

2

3

2SD874-R

2SD874-S

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

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