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MP6K12 数据表(PDF) 2 Page - Rohm

部件名 MP6K12
功能描述  4V Drive Nch Nch MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

MP6K12 数据表(HTML) 2 Page - Rohm

  MP6K12 Datasheet HTML 1Page - Rohm MP6K12 Datasheet HTML 2Page - Rohm MP6K12 Datasheet HTML 3Page - Rohm MP6K12 Datasheet HTML 4Page - Rohm MP6K12 Datasheet HTML 5Page - Rohm MP6K12 Datasheet HTML 6Page - Rohm MP6K12 Datasheet HTML 7Page - Rohm  
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Data Sheet
MP6K12
　
Electrical characteristics (Ta = 25
C)
<It is the same ratings for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Unit
Gatesource leakage
IGSS

10
AVGS=20V, VDS=0V
Drainsource breakdown voltage V (BR)DSS
30

VID=1mA, VGS=0V
Zero gate voltage drain current
IDSS

1
AVDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
2.5
V
VDS=10V, ID=1mA
30
42
ID=5.0A, VGS=10V
40
56
ID=5.0A, VGS=4.5V
45
63
ID=5.0A, VGS=4.0V
Forward transfer admittance
l Yfs l
2.5

SID=5.0A, VDS=10V
Input capacitance
Ciss
250
pF
VDS=10V
Output capacitance
Coss
90
pF
VGS=0V
Reverse transfer capacitance
Crss
45
pF
f=1MHz
Turnon delay time
td(on)
6
ns
ID=2.5A, VDD 15V
Rise time
tr
27
ns
VGS=10V
Turnoff delay time
td(off)
26
ns
RL=6.0
Fall time
tf
5
ns
RG=10
Total gate charge
Qg
4.0
nC ID=5.0A, VDD 15V
Gatesource charge
Qgs
1.2
nC VGS=5V
Gatedrain charge
Qgd
1.2
nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25
C)
<It is the same ratings for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max. Unit
Forward Voltage
VSD

1.2
V
Is=5.0A, VGS=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drainsource onstate
resistance
RDS (on)*
*
*
*
*
*
*
*
*
*
*
*
*
2/6
2011.04 - Rev.A



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