Data Sheet

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4V Drive Nch + Nch MOSFET

MP6K13



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Low on-resistance.

2) High power package(MPT6).

3) Low voltage drive(4V drive).



Application

Switching



Packaging specifications



Inner circuit

Package

Taping

Code

TR

Basic ordering unit (pieces)

1000

MP6K13





Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

30

V

Gate-source voltage

20

V

Continuous

6.0

A

Pulsed

12

A

Continuous

1.6

A

Pulsed

12

A

2.0

W / TOTAL

1.4

W / ELEMENT

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to 150

C

*1 Pw

10s, Duty cycle1%

*2 Mounted on a ceramic board.

Type

Source current

(Body Diode)

Drain current

Parameter

Power dissipation

MPT6

(Duel)

(1)

(2)

(3)

(6)

(5)

(4)

*2

*1

*1

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

∗

1 ESD PROTECTION DIODE

∗

2 BODY DIODE

∗2

∗2

∗1

∗1

(1)

(2)

(3)

(6)

(5)

(4)

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2011.03 - Rev.A